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Polar TM HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
IXFK250N10P
IXFX250N10P
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
100V
250A
6.5m Ω
200ns
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
V DSS
V DGR
V GSS
V GSM
I D25
I LRMS
I DM
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
Maximum Ratings
100
100
± 20
± 30
250
160
700
V
V
V
V
A
A
A
G
D
S
PLUS247 (IXFX)
Tab
I A
E AS
T C = 25 ° C
T C = 25 ° C
125
3
A
J
G
D
S
Tab
P D
dv/dt
T J
T JM
T stg
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
1250
20
-55 ... +175
175
-55 ... +175
W
V/ns
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T L
T SOLD
M d
F C
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
300
260
1.13/10
20..120 /4.5..27
10
6
° C
° C
Nm/lb.in.
N/lb.
g
g
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Diode
Low Q G and R DS(on)
Low Package Inductance
Advantages
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
BV DSS
V GS = 0V, I D = 3mA
100
V
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 20V, V DS = 0V
3.0
5.0
± 200
V
nA
Applications
DC-DC Converters
I DSS
V DS = V DSS , V GS = 0V
T J = 150 ° C
50 μ A
1 mA
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
R DS(on)
V GS = 10V, I D = 50A, Note 1
6.5
m Ω
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
? 2010 IXYS CORPORATION, All Rights Reserved
DS100021A(6/10)
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相关代理商/技术参数
IXFK25N80 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs
IXFK25N90 功能描述:MOSFET 25 Amps 900V 0.33 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK260N17T 功能描述:MOSFET 260A 170V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N100P 功能描述:MOSFET 26 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N120P 功能描述:MOSFET 26 Amps 1200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N60Q 功能描述:MOSFET 28 Amps 600V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N90 功能描述:MOSFET 26 Amps 900V 0.3 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK27N80 功能描述:MOSFET 800V 27A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube